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2PD601ART PDF预览

2PD601ART

更新时间: 2024-11-15 07:29:19
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关光电二极管
页数 文件大小 规格书
10页 86K
描述
50 V, 100 mA NPN general-purpose transistor

2PD601ART 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.11最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):210JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

2PD601ART 数据手册

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2PD601ART  
50 V, 100 mA NPN general-purpose transistor  
Rev. 01 — 15 March 2007  
Product data sheet  
1. Product profile  
1.1 General description  
NPN general-purpose transistor in a small SOT23 (TO-236AB) Surface-Mounted Device  
(SMD) plastic package.  
PNP complement: 2PB709ART.  
1.2 Features  
I General-purpose transistor  
I Small SMD plastic package  
1.3 Applications  
I General-purpose switching and amplification  
1.4 Quick reference data  
Table 1.  
Symbol  
VCEO  
IC  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
collector current  
open base  
-
-
-
-
-
100  
340  
mA  
hFE  
DC current gain  
VCE = 10 V;  
IC = 2 mA  
210  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
base  
Simplified outline  
Symbol  
3
3
2
emitter  
3
collector  
1
1
2
2
sym021  

2PD601ART 替代型号

型号 品牌 替代类型 描述 数据表
2PD601ART,215 NXP

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2PD601ART - 50 V, 100 mA NPN general-purpose transistor TO-236 3-Pin
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