2N7002KDW
ELECTRICALCHARACTERISTICS
Parameter
Static
Symbol
Test Condition
Min.
Typ.
Max.
Units
Drain-Source Breakdown
Voltage
BVDSS
VGS(th)
RDS(on)
RDS(on)
IDSS
VGS=0V, ID=10uA
VDS=VGS, ID=250uA
VGS=4.5V, I D=200mA
VGS=10V, I D=500mA
VDS=60V, VGS=0V
60
-
-
-
-
-
-
-
-
2.5
4.0
3.0
1
V
V
Gate Threshold Voltage
1
Drain-Source On-State
Resistance
-
Ω
Drain-Source On-State
Resistance
-
Zero Gate Voltage Drain
Current
-
-
uA
uA
Gate Body Leakage
Forward Transconductance
Dynamic
IGSS
VGS=+20V, VDS=0V
VDS=15V, ID=250mA
+10
-
gfS
100
mS
VDS=15V, ID=200mA
VGS=4.5V
Total Gate Charge
Qg
-
-
0.8
nC
ns
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
ton
toff
-
-
-
-
-
-
-
-
-
-
20
40
35
10
5
VDD=30V , RL=150Ω
ID=200mA , VGEN=10V
RG=10Ω
Ciss
Coss
Crss
VDS=25V, VGS=0V
f=1.0MHZ
pF
Reverse Transfer
Capacitance
Source-Drain Diode
Diode Forward Voltage
VSD
Is
IS=200mA , VGS=0V
-
-
-
0.82
1.3
115
800
V
Continuous Diode Forward
Current
-
-
-
-
mA
mA
Pulsed Diode Forward
Current
IsM
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
RL
RL
V
IN
V
GS
V
OUT
1mA
RG
RG
May 21.2010-REV.01
PAGE . 2