Datasheet > 2N7002E

2N7002E

更新时间： 2024-03-03 10:11:11

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	701K
描述
SOT-523

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2N7002E 数据手册

2N7002E

Electrical Characteristics (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Conditions

Min

Typ

Max

Units

Static Parameter

Drain-Source Breakdown Voltage

BV_DSS

V_GS= 0V, I_D=250μA

V_DS=60V, V_GS=0V

V_DS=60V, V_GS=0V, Tj=150℃

V_GS= ±30V, V_DS=0V

V_DS= V_GS, I_D=250μA

V_GS=10V, I_D=0.3A

V_GS=4.5V, I_D=0.2A

I_S=0.3A, V_GS=0V

Zero Gate Voltage Drain Current

I_DSS

μA

100

±100

2.5

1.4

1.6

1.2

Gate-Body Leakage Current

Gate Threshold Voltage

I_GSS

V_GS(th)

1.0

1.6

1.0

1.15

0.85

6.5

Static Drain-Source On-Resistance

R_DS(ON)

Diode Forward Voltage

Gate resistance

V_SD

R_G

I_S

f=1MHz

Maximum Body-Diode Continuous Current

Dynamic Parameters

Input Capacitance

0.3

C_iss

C_oss

C_rss

5.2

2.2

Output Capacitance

V_DS=30V, V_GS=0V, f=1MHz

Reverse Transfer Capacitance

Switching Parameters

Total Gate Charge

Q_g

Q_gs

Q_gd

Q_rr

t_rr

1.6

0.47

0.25

2.5

Gate-Source Charge

Gate-Drain Charge

V_GS=10V, V_DS=30V, I_D=0.3A

Reverse Recovery Charge

Reverse Recovery Time

Turn-on Delay Time

I_F=0.3A, di/dt=100A/us

11.5

3.3

t_D(on)

t_r

t_D(off)

t_f

Turn-on Rise Time

V_GS=10V, V_DD=30V, I_D=0.3A

R_GEN=6Ω

Turn-off Delay Time

9.6

Turn-off fall Time

A. Repetitive rating; pulse width limited by max. junction temperature.

B. P_dis based on max. junction temperature, using junction-case thermal resistance.

C. The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2oz. Copper, in the still air environment with T_A=25℃.

The maximum allowed junction temperature of 150℃. The value in any given application depends on the user's specific board design.

2 / 8

S-E276

Rev.1.0,12-Dec-22

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

123 4 5 6 7 8

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