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2N7002DWA-13 PDF预览

2N7002DWA-13

更新时间: 2024-02-25 07:06:25
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
5页 259K
描述
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

2N7002DWA-13 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
Reach Compliance Code:compliant风险等级:5.05
最大漏极电流 (Abs) (ID):0.2 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.4 W
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:30
Base Number Matches:1

2N7002DWA-13 数据手册

 浏览型号2N7002DWA-13的Datasheet PDF文件第1页浏览型号2N7002DWA-13的Datasheet PDF文件第2页浏览型号2N7002DWA-13的Datasheet PDF文件第3页浏览型号2N7002DWA-13的Datasheet PDF文件第4页 
2N7002DWA  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
C2  
C2  
Dimensions Value (in mm)  
Z
G
2.5  
1.3  
X
Y
0.42  
0.6  
C1  
G
Y
Z
C1  
C2  
1.9  
0.65  
X
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Copyright © 2013, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
October 2013  
© Diodes Incorporated  
2N7002DWA  
Document number: DS36120 Rev. 6 - 2  

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