2N7002BKMB

更新时间： 2024-02-23 22:09:04

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关
页数	文件大小	规格书
15页	667K
描述
60 V, single N-channel Trench MOSFET

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技术参数
数据手册

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2N7002BKMB 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002BKMB 数据手册

2N7002BKMB

NXP Semiconductors

60 V, single N-channel Trench MOSFET

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_DS

Parameter

Conditions

Min

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

[1]

I_D

V_GS= 10 V; T_amb= 25 °C

V_GS= 10 V; T_amb= 100 °C

T_amb= 25 °C; single pulse; t_p≤ 10 µs

T_amb= 25 °C

450

220

1.8

I_DM

P_tot

peak drain current

[2]

[1]

total power dissipation

360

715

T_sp= 25 °C

2700 mW

T_j

junction temperature

ambient temperature

storage temperature

-55

-65

150

°C

T_amb

T_stg

Source-drain diode

[1]

[3]

I_S

source current

T_amb= 25 °C

450

ESD maximum rating

V_ESD

electrostatic discharge voltage HBM

2000

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm².

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3] Measured between all pins.

001aao121

001aao122

120

der

(%)

-75

-25

125

175

-25

125

175

T (°C)

Fig 2. Normalized total power dissipation as a

function of junction temperature

Fig 3. Normalized continuous drain current as a

function of junction temperature

2N7002BKMB

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 2 — 13 June 2012

3 of 15

1 234 5 6 7...15

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