Datasheet > 2N6788U

2N6788U

更新时间： 2024-11-24 07:29:11

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	179K
描述
N-CHANNEL MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

2N6788U 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

N-CHANNEL MOSFET

Qualified per MIL-PRF-19500/555

DEVICES

LEVELS

2N6788

2N6788U

JAN

JANTX

JANTXV

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Drain – Source Voltage

Gate – Source Voltage

Symbol

V_DS

Value

100

Unit

Vdc

V_GS

± 20

Continuous Drain Current

T_C= +25°C

2N6788

2N3788U

6.0

4.5

I_D1

I_D2

P_tl

Adc

Continuous Drain Current

T_C= +100°C

2N6788

2N3788U

3.5

2.8

2N6788

2N3788U

20 ⁽¹⁾

Max. Power Dissipation

TO-205AF

(formerly TO-39)

Drain to Source On State Resistance

Operating & Storage Temperature

R_ds(on)

0.30 ⁽²⁾

T_op, T_stg

-55 to +150

°C

Note: (1) Derated Linearly by 0.16 W/°C (2N6788); 0.11 W/°C (2N6788U) for T_C> +25°C

(2) V_GS= 10Vdc, I_D= 3.5A (2N6788), 2.8A (2N6788U)

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol Min. Max.

Unit

Drain-Source Breakdown Voltage

V_GS= 0V, I_D= 1mAdc

V_(BR)DSS

100

Vdc

U – 18 LCC

Gate-Source Voltage (Threshold)

V_DS≥ V_GS, I_D= 0.25mA

V_GS(th)1

V_GS(th)2

V_GS(th)3

2.0

1.0

4.0

5.0

_DS≥ V_GS, I_D= 0.25mA, T_j= +125°C

V_DS≥ V_GS, I_D= 0.25mA, T_j= -55°C

Gate Current

V_GS= ±20V, V_DS= 0V

I_GSS1

I_GSS2

±100

±200

nAdc

_GS= ±20V, V_DS= 0V, T_j= +125°C

T4-LDS-0164 Rev. 1 (100553)

Page 1 of 4

12 3 4

中文翻译

下载PDF

2N6788U 替代型号

型号	品牌	替代类型	描述	数据表
IRFE120	INFINEON	功能相似	HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

与2N6788U相关器件

型号	品牌	获取价格	描述	数据表
2N6789	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2N678A	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 30V V(BR)CEO \| 15A I(C) \| TO-3
2N678B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 15A I(C) \| TO-3
2N678C	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 70V V(BR)CEO \| 15A I(C) \| TO-3
2N6790	SEME-LAB	获取价格	N–CHANNEL POWER MOSFET
2N6790	FAIRCHILD	获取价格	3.5A, 200V, 0.800 Ohm, N-Channel Power
2N6790	INFINEON	获取价格	200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6790 with Hermetic Packagi
2N6790E	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6790EA	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
2N6790EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se