是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-CDSO-N3 | Reach Compliance Code: | compliant |
风险等级: | 5.74 | 配置: | SINGLE |
最小漏源击穿电压: | 350 V | 最大漏极电流 (ID): | 2 A |
最大漏源导通电阻: | 1.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CDSO-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6792 | SEME-LAB |
获取价格 |
N-Channel MOSFET in a Hermetically sealed TO39 Metal Package | |
2N6792TXV | RENESAS |
获取价格 |
2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | |
2N6793 | NJSEMI |
获取价格 |
N-CHANNEL ENHANCEMENT MOSFET | |
2N6793 | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
2N6794 | NJSEMI |
获取价格 |
N-CHANNEL POWER MOSFET | |
2N6794 | SEME-LAB |
获取价格 |
N-CHANNEL POWER MOSFET | |
2N6794 | INFINEON |
获取价格 |
500V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6794 with Hermetic Packagi | |
2N6794_01 | SEME-LAB |
获取价格 |
N–CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2N6794LCC4 | SEME-LAB |
获取价格 |
N–CHANNEL POWER MOSFET | |
2N6795 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-39 |