Datasheet > 2N6387

2N6387

更新时间： 2024-11-18 06:17:27

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	46K
描述
Silicon NPN Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6387 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2N6386 2N6387 2N6388

DESCRIPTION

·With TO-220C package

·Complement to type 2N6666/6667/6668

·DARLINGTON

·High DC current gain

·Low collector saturation voltage

APPLICATIONS

·Designed for general-purpose amplifier

and low speed switching applications

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

2N6386

CONDITIONS

VALUE

UNIT

V_CBO

Collector-base voltage

Collector-emitter voltage

Open emitter

2N6387

2N6388

2N6386

2N6387

2N6388

V_CEO

Open base

V_EBO

Emitter-base voltage

Collector current-DC

Open collector

2N6386

I_C

2N6387/6388

I_CM

I_B

Collector current-Pulse

Base current-DC

0.25

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

150

-65~150

T_stg

12 3

中文翻译

下载PDF

与2N6387相关器件

型号	品牌	获取价格	描述	数据表
2N6387/D	ETC	获取价格	Plastic Medium-Power Transistors
2N6387_06	ONSEMI	获取价格	Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8
2N6387_07	ONSEMI	获取价格	Plastic Medium-Power Silicon Transistors
2N638716	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N638716A	MOTOROLA	获取价格	暂无描述
2N6387-6200	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6261	RENESAS	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6387-6263	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast