生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
基于收集器的最大容量: | 200 pF | 集电极-发射极最大电压: | 60 V |
配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 100 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 65 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 3 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6387-6263 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6387-6265 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6387A | MOTOROLA |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6387AF | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6387AJ | MOTOROLA |
获取价格 |
10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6387AJ | ONSEMI |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN | |
2N6387AK | ONSEMI |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN | |
2N6387AN | ONSEMI |
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10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN | |
2N6387AS | ONSEMI |
获取价格 |
TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Pow | |
2N6387AU | ONSEMI |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN |