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2N6387AS PDF预览

2N6387AS

更新时间: 2024-10-30 13:04:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
8页 76K
描述
TRANSISTOR 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN, BIP General Purpose Power

2N6387AS 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.81Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):10 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):1000JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

2N6387AS 数据手册

 浏览型号2N6387AS的Datasheet PDF文件第2页浏览型号2N6387AS的Datasheet PDF文件第3页浏览型号2N6387AS的Datasheet PDF文件第4页浏览型号2N6387AS的Datasheet PDF文件第5页浏览型号2N6387AS的Datasheet PDF文件第6页浏览型号2N6387AS的Datasheet PDF文件第7页 
ON Semiconductor)  
2N6387  
Plastic Medium-Power  
Silicon Transistors  
*
2N6388  
*ON Semiconductor Preferred Device  
. . . designed for general–purpose amplifier and low–speed  
switching applications.  
DARLINGTON  
8 AND 10 AMPERE  
NPN SILICON  
High DC Current Gain —  
h
FE  
= 2500 (Typ) @ I  
= 4.0 Adc  
C
POWER TRANSISTORS  
60–80 VOLTS  
65 WATTS  
Collector–Emitter Sustaining Voltage – @ 100 mAdc  
= 60 Vdc (Min) — 2N6387  
V
CEO(sus)  
= 80 Vdc (Min) — 2N6388  
Low Collector–Emitter Saturation Voltage —  
= 2.0 Vdc (Max) @ I  
V
CE(sat)  
C
= 5.0 Adc — 2N6387, 2N6388  
4
Monolithic Construction with Built–In Base–Emitter Shunt Resistors  
TO–220AB Compact Package  
STYLE 1:  
PIN 1. BASE  
2. COLLECTOR  
3. EMITTER  
*MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
2N6387  
60  
2N6388  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
1
4. COLLECTOR  
2
V
CEO  
3
V
60  
80  
CB  
EB  
CASE 221A–09  
TO–220AB  
V
5.0  
Collector Current — Continuous  
Peak  
I
C
10  
15  
10  
15  
Base Current  
I
B
250  
mAdc  
Total Power Dissipation  
P
D
@ T = 25_C  
65  
Watts  
C
Derate above 25_C  
0.52  
W/_C  
Total Power Dissipation  
P
D
@ T = 25_C  
2.0  
Watts  
A
Derate above 25_C  
0.016  
W/_C  
Operating and Storage Junction,  
Temperature Range  
T , T  
J stg  
–65 to +150  
_C  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
1.92  
62.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θJC  
R
θJA  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
April, 2002 – Rev. 10  
2N6387/D  

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