是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | TO-220AB, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.81 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 60 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 1000 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6387AU | ONSEMI |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN | |
2N6387BG | ONSEMI |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN | |
2N6387D1 | MOTOROLA |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6387-DR6259 | RENESAS |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6387-DR6269 | RENESAS |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6387-DR6280 | RENESAS |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
2N6387DW | ONSEMI |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN | |
2N6387G | ONSEMI |
获取价格 |
Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 | |
2N6387L | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
2N6387N | MOTOROLA |
获取价格 |
10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB |