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2N6387_07 PDF预览

2N6387_07

更新时间： 2024-11-18 07:29:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 97K
描述
Plastic Medium-Power Silicon Transistors

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中文翻译

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2N6387_07 数据手册

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Operating and Storage Junction,  
Temperature Range  
T , T  
J
                                                                                                                        
65 to +150  
°C  
ORDERING INFORMATION  
2N6387, 2N6388  
2N6388 is a Preferred Device  
Plastic Medium-Power  
Silicon Transistors  
These devices are designed for general-purpose amplifier and  
low-speed switching applications.  
Features  
http://onsemi.com  
•ꢀHigh DC Current Gain - h = 2500 (Typ) @ I = 4.0 Adc  
FE  
C
•ꢀCollector-Emitter Sustaining Voltage - @ 100 mAdc  
CEO(sus)  
DARLINGTON NPN SILICON  
POWER TRANSISTORS  
8 AND 10 AMPERES  
V
= 60 Vdc (Min) - 2N6387  
= 80 Vdc (Min) - 2N6388  
•ꢀLow Collector-Emitter Saturation Voltage -  
= 2.0 Vdc (Max) @ I  
= 5.0 Adc - 2N6387, 2N6388  
65 WATTS, 60 - 80 VOLTS  
V
CE(sat)  
C
•ꢀMonolithic Construction with Built-In Base-Emitter Shunt Resistors  
•ꢀTO-220AB Compact Package  
•ꢀPb-Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Value  
Unit  
TO-220AB  
CASE 221A  
STYLE 1  
2N638xG  
AYWW  
Collector-Emitter Voltage  
2N6387  
2N6388  
V
CEO  
60  
80  
Vdc  
Collector-Base Voltage  
2N6387  
2N6388  
V
CB  
60  
80  
Vdc  
1
2
3
Emitter-Base Voltage  
V
5.0  
Vdc  
Adc  
EB  
Collector Current - Continuous  
- Peak  
I
10  
15  
C
2N638x = Device Code  
x = 7 or 8  
Base Current  
I
B
250  
mAdc  
G
= Pb-Free Package  
A
Y
WW  
= Assembly Location  
= Year  
= Work Week  
Total Power Dissipation @ T = 25_C  
P
65  
0.52  
W
W/°C  
C
D
Derate above 25_C  
Total Power Dissipation @ T = 25_C  
P
D
2.0  
0.016  
W
W/°C  
A
Derate above 25_C  
stg  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristics  
2N6387  
TO-220AB  
50 Units / Rail  
50 Units / Rail  
Symbol  
Max  
1.92  
62.5  
Unit  
_C/W  
_C/W  
2N6387G  
TO-220AB  
(Pb-Free)  
Thermal Resistance, Junction-to-Case  
R
q
JC  
2N6388  
TO-220AB  
50 Units / Rail  
50 Units / Rail  
Thermal Resistance, Junction-to-Ambient  
R
q
JA  
2N6388G  
TO-220AB  
(Pb-Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
November, 2007 - Rev. 13  
1
Publication Order Number:  
2N6387/D  
 
123456

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 		10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
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