Datasheet > 2N6387/D

2N6387/D

更新时间： 2024-11-17 23:19:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	74K
描述
Plastic Medium-Power Transistors

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数据手册

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2N6387/D 数据手册

ON Semiconductort

2N6387

Plastic Medium-Power

Silicon Transistors

2N6388

*ON Semiconductor Preferred Device

. . . designed for general–purpose amplifier and low–speed

switching applications.

DARLINGTON

8 AND 10 AMPERE

NPN SILICON

• High DC Current Gain —

= 2500 (Typ) @ I

POWER TRANSISTORS

60–80 VOLTS

= 4.0 Adc

65 WATTS

• Collector–Emitter Sustaining Voltage – @ 100 mAdc

= 60 Vdc (Min) — 2N6387

CEO(sus)

= 80 Vdc (Min) — 2N6388

• Low Collector–Emitter Saturation Voltage —

= 2.0 Vdc (Max) @ I

CE(sat)

= 5.0 Adc — 2N6387, 2N6388

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

• TO–220AB Compact Package

*MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

2N6387

2N6388

Unit

Vdc

Adc

CEO

CASE 221A–09

TO–220AB

5.0

Collector Current — Continuous

Peak

Base Current

250

mAdc

Total Power Dissipation

@ T = 25_C

0.52

Watts

W/_C

Derate above 25_C

Total Power Dissipation

@ T = 25_C

2.0

0.016

Watts

Derate above 25_C

W/_C

Operating and Storage Junction,

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

1.92

62.5

Unit

_C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 9

2N6387/D

12 3 4 5 6 7 8

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与2N6387/D相关器件

型号	品牌	获取价格	描述	数据表
2N6387_06	ONSEMI	获取价格	Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8
2N6387_07	ONSEMI	获取价格	Plastic Medium-Power Silicon Transistors
2N638716	MOTOROLA	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N638716A	MOTOROLA	获取价格	暂无描述
2N6387-6200	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6203	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6258	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6261	RENESAS	获取价格	10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6387-6263	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6387-6265	RENESAS	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast