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2N6387_06 PDF预览

2N6387_06

更新时间： 2024-11-18 03:56:23
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
6页 80K
描述
Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS

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2N6387_06 数据手册

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2N6387, 2N6388  
2N6388 is a Preferred Device  
Plastic Medium−Power  
Silicon Transistors  
These devices are designed for general−purpose amplifier and  
low−speed switching applications.  
Features  
http://onsemi.com  
• High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc  
FE  
C
DARLINGTON NPN SILICON  
POWER TRANSISTORS  
8 AND 10 AMPERES  
• Collector−Emitter Sustaining Voltage − @ 100 mAdc  
V
= 60 Vdc (Min) − 2N6387  
= 80 Vdc (Min) − 2N6388  
CEO(sus)  
• Low Collector−Emitter Saturation Voltage −  
65 WATTS, 60 − 80 VOLTS  
V
CE(sat)  
= 2.0 Vdc (Max) @ I  
C
= 5.0 Adc − 2N6387, 2N6388  
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• TO−220AB Compact Package  
• Pb−Free Packages are Available*  
MARKING  
DIAGRAM  
4
MAXIMUM RATINGS (Note 1)  
Rating  
Symbol  
Value  
Unit  
TO−220AB  
CASE 221A  
STYLE 1  
2N638xG  
AYWW  
Collector−Emitter Voltage  
2N6387  
2N6388  
V
60  
80  
Vdc  
CEO  
Collector−Base Voltage  
2N6387  
2N6388  
V
60  
80  
Vdc  
CB  
EB  
1
2
3
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
10  
15  
C
2N638x = Device Code  
x = 7 or 8  
Base Current  
I
250  
mAdc  
B
G
A
= Pb−Free Package  
= Assembly Location  
Total Power Dissipation @ T = 25_C  
P
65  
0.52  
W
W/°C  
C
D
Y
= Year  
Derate above 25_C  
WW  
= Work Week  
Total Power Dissipation @ T = 25_C  
P
2.0  
0.016  
W
W/°C  
A
D
Derate above 25_C  
ORDERING INFORMATION  
Operating and Storage Junction,  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristics  
2N6387  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
2N6387G  
TO−220AB  
(Pb−Free)  
Symbol  
Max  
1.92  
62.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
JA  
2N6388  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
R
q
2N6388G  
TO−220AB  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 12  
2N6387/D  
 
123456

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