Datasheet > 2N6371

2N6371

更新时间： 2024-11-02 06:19:11

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管局域网
页数	文件大小	规格书
3页	42K
描述
Silicon NPN Power Transistors

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中文翻译

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2N6371 数据手册

JMnic

Product Specification

Silicon NPN Power Transistors

2N6371

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·High dissipation capability

·Excellent safe operating area

APPLICATIONS

·Series and shunt regulators

·High-fidelity amplifiers

·Power-switching circuits

PINNING

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_B

Base current

P_D

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

117

200

-65~200

℃

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

VALUE

UNIT

R_{th j-c}

1.5

℃/W

12 3

中文翻译

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与2N6371相关器件

型号	品牌	获取价格	描述	数据表
2N6371HV	ETC	获取价格	TO-3 Power Package Transistors (NPN)
2N6371LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2
2N6372	ISC	获取价格	Silicon NPN Power Transistors
2N6372	SAVANTIC	获取价格	Silicon NPN Power Transistors
2N6372	JMNIC	获取价格	Silicon NPN Power Transistors
2N6372	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO66
2N6372	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N6372	NJSEMI	获取价格	Silicon N-P-N and P-N-P Medium-Power Transistors
2N6372LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2
2N6373	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO66