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2N6373 PDF预览

2N6373

更新时间: 2024-11-20 06:18:27
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无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

2N6373 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Base Number Matches:1

2N6373 数据手册

 浏览型号2N6373的Datasheet PDF文件第2页浏览型号2N6373的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6372 2N6373 2N6374  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Excellent safe operating area  
APPLICATIONS  
·Designed for switching and wide-band  
amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N6372  
2N6373  
2N6374  
2N6372  
2N6373  
2N6374  
90  
70  
VCBO  
Collector-base voltage  
Open emitter  
V
50  
80  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
60  
40  
VEBO  
IC  
Emitter-base voltage  
Collector current  
6
V
A
6
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
40  
W
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.37  
/W  

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