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2N6374 PDF预览

2N6374

更新时间: 2024-11-24 06:18:27
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 119K
描述
Silicon NPN Power Transistors

2N6374 数据手册

 浏览型号2N6374的Datasheet PDF文件第2页浏览型号2N6374的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6372 2N6373 2N6374  
DESCRIPTION  
·With TO-66 package  
·Low collector saturation voltage  
·Excellent safe operating area  
APPLICATIONS  
·Designed for switching and wide-band  
amplifier applications  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Emitter  
Fig.1 simplified outline (TO-66) and symbol  
Collector  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
2N6372  
2N6373  
2N6374  
2N6372  
2N6373  
2N6374  
90  
70  
VCBO  
Collector-base voltage  
Open emitter  
V
50  
80  
VCEO  
Collector-emitter voltage  
Open base  
Open collector  
TC=25  
V
60  
40  
VEBO  
IC  
Emitter-base voltage  
Collector current  
6
V
A
6
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
40  
W
150  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
4.37  
/W  

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