Datasheet > 2N6052/D

2N6052/D

更新时间： 2024-11-03 23:19:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	128K
描述
Darlington Complementary Silicon Power Transistors

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数据手册

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2N6052/D 数据手册

ON Semiconductort

PNP

Darlington Complementary

Silicon Power Transistors

2N6052

NPN

. . . designed for general–purpose amplifier and low frequency

switching applications.

2N6058

• High DC Current Gain —

= 3500 (Typ) @ I = 5.0 Adc

2N6059

*ON Semiconductor Preferred Device

• Collector–Emitter Sustaining Voltage — @ 100 mA

= 80 Vdc (Min) — 2N6058

CEO(sus)

100 Vdc (Min) — 2N6052, 2N6059

• Monolithic Construction with Built–In Base–Emitter Shunt Resistors

DARLINGTON

12 AMPERE

MAXIMUM RATINGS (1)

COMPLEMENTARY

SILICON

POWER TRANSISTORS

80–100 VOLTS

150 WATTS

2N6052

2N6059

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base voltage

Symbol

2N6058

Unit

Vdc

Adc

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.2

Adc

Total Device Dissipation

150

Watts

@T = 25_C

Derate above 25_C

0.857

W/_C

CASE 1–07

TO–204AA

(TO–3)

Operating and Storage Junction

Temperature Range

T , T

–65 to +200_C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Rating

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

1.17

_C/W

160

140

120

100

125

150

175

200

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

March, 2001 – Rev. 2

2N6052/D

12 3 4 5 6 7 8

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与2N6052/D相关器件

型号	品牌	获取价格	描述	数据表
2N6052_06	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
2N6052E3	MICROSEMI	获取价格	Power Bipolar Transistor, 12A I(C), PNP
2N6052G	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
2N6052G	NJSEMI	获取价格	Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-204 Tray
2N6052LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2
2N6053	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
2N6053	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N6053	MOSPEC	获取价格	POWER TRANSISTORS(8A,100W)
2N6053	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N6053	COMSET	获取价格	COMPLEMENTARY POWER DARLINGTON