Datasheet > 2N6053_12

2N6053_12

更新时间： 2024-11-12 12:30:59

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
POWER COMPLEMENTARY SILICON TRANSISTORS

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2N6053_12 数据手册

PNP 2N6053

POWER COMPLEMENTARY SILICON TRANSISTORS

The 2N6053 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted

in Jedec TO-3 metal case.

They are inteded for use in power linear and low frequency switching applications.

The complementary NPN types are 2N6055.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

I_CM

I_B

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base Voltage

Collector Current

Collector Peak Current

Base Current

I_E=0

I_B=0

I_C=0

2N6053

-60

-5.0

-8

-16

-120

100

P_T

Power Dissipation

@ T_C< 25°

T_J

T_s

200

-65 to +200

Junction

Storage Temperature

°C

THERMAL CHARACTERISTICS

Symbol

R_thJ-C

Ratings

Value

Unit

Thermal Resistance, Junction to Case

1.17

°C/W

17/10/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

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与2N6053_12相关器件

型号	品牌	获取价格	描述	数据表
2N6054	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N6054	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
2N6054	ISC	获取价格	Silicon PNP Power Transistors
2N6054	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N6054	MOSPEC	获取价格	POWER TRANSISTORS(8A,100W)
2N6054	CENTRAL	获取价格	8A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
2N6054LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 P
2N6055	MOSPEC	获取价格	POWER TRANSISTORS(8A,100W)
2N6055	COMSET	获取价格	COMPLEMENTARY POWER DARLINGTON
2N6055	SAVANTIC	获取价格	Silicon NPN Power Transistors