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2N6054 PDF预览

2N6054

更新时间: 2024-11-02 05:56:23
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无锡固电 - ISC 晶体晶体管
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3页 132K
描述
Silicon PNP Power Transistors

2N6054 数据手册

 浏览型号2N6054的Datasheet PDF文件第2页浏览型号2N6054的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N6053 2N6054  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·DARLINGTON  
·Complement to type 2N6055;2N6056  
APPLICATIONS  
·General-purpose power amplifier and low  
frequency swithing applications  
PINNING (See Fig.2)  
PIN  
DESCRIPTION  
1
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
ABSOLUTE MAXIMUM RATINGS(TC=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-60  
UNIT  
2N6053  
2N6054  
2N6053  
2N6054  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
-8  
Collector current-peak  
Base current  
-16  
A
-120  
100  
200  
-65~200  
mA  
W
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.75  
/W  
Rth j-c  

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