Datasheet > 2N6052_06

2N6052_06

更新时间： 2024-11-12 03:56:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	150K
描述
Darlington Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2N6052_06 数据手册

ON Semiconductort

PNP

Darlington Complementary

Silicon Power Transistors

2N6052

NPN

. . . designed for general−purpose amplifier and low frequency

switching applications.

2N6058

• High DC Current Gain —

= 3500 (Typ) @ I = 5.0 Adc

2N6059

*ON Semiconductor Preferred Device

• Collector−Emitter Sustaining Voltage — @ 100 mA

= 80 Vdc (Min) — 2N6058

CEO(sus)

100 Vdc (Min) — 2N6052, 2N6059

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

DARLINGTON

12 AMPERE

COMPLEMENTARY

SILICON

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

POWER TRANSISTORS

80−100 VOLTS

150 WATTS

MAXIMUM RATINGS (1)

2N6052

2N6059

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base voltage

Symbol

2N6058

Unit

Vdc

Adc

100

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.2

Adc

CASE 1−07

TO−204AA

(TO−3)

Total Device Dissipation

150

Watts

@T = 25_C

Derate above 25_C

0.857

W/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200_C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Rating

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

1.17

_C/W

160

140

120

100

125

150

175

200

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

2N6052/D

12 3 4 5 6 7

中文翻译

下载PDF

与2N6052_06相关器件

型号	品牌	获取价格	描述	数据表
2N6052E3	MICROSEMI	获取价格	Power Bipolar Transistor, 12A I(C), PNP
2N6052G	ONSEMI	获取价格	Darlington Complementary Silicon Power Transistors
2N6052G	NJSEMI	获取价格	Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-204 Tray
2N6052LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2
2N6053	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
2N6053	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N6053	MOSPEC	获取价格	POWER TRANSISTORS(8A,100W)
2N6053	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N6053	COMSET	获取价格	COMPLEMENTARY POWER DARLINGTON
2N6053	ISC	获取价格	Silicon PNP Power Transistors