Datasheet > 2N6052_06

2N6052_06

更新时间： 2024-11-04 03:56:19

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	150K
描述
Darlington Complementary Silicon Power Transistors

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2N6052_06 数据手册

ON Semiconductort

PNP

Darlington Complementary

Silicon Power Transistors

2N6052

NPN

. . . designed for general−purpose amplifier and low frequency

switching applications.

2N6058

• High DC Current Gain —

= 3500 (Typ) @ I = 5.0 Adc

2N6059

*ON Semiconductor Preferred Device

• Collector−Emitter Sustaining Voltage — @ 100 mA

= 80 Vdc (Min) — 2N6058

CEO(sus)

100 Vdc (Min) — 2N6052, 2N6059

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors

DARLINGTON

12 AMPERE

COMPLEMENTARY

SILICON

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

POWER TRANSISTORS

80−100 VOLTS

150 WATTS

MAXIMUM RATINGS (1)

2N6052

2N6059

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base voltage

Symbol

2N6058

Unit

Vdc

Adc

100

CEO

100

5.0

Collector Current — Continuous

Peak

Base Current

0.2

Adc

CASE 1−07

TO−204AA

(TO−3)

Total Device Dissipation

150

Watts

@T = 25_C

Derate above 25_C

0.857

W/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +200_C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Rating

Unit

Thermal Resistance, Junction to Case

(1) Indicates JEDEC Registered Data.

1.17

_C/W

160

140

120

100

125

150

175

200

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 3

2N6052/D

12 3 4 5 6 7

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