Datasheet > 2N6053

2N6053

更新时间： 2024-11-02 05:56:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	132K
描述
Silicon PNP Power Transistors

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2N6053 数据手册

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6053 2N6054

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·DARLINGTON

·Complement to type 2N6055;2N6056

APPLICATIONS

·General-purpose power amplifier and low

frequency swithing applications

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

ABSOLUTE MAXIMUM RATINGS(T_C=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

-60

UNIT

2N6053

2N6054

2N6053

2N6054

V_CBO

Collector-base voltage

Open emitter

-80

-60

V_CEO

Collector-emitter voltage

Open base

-80

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

-5

-8

Collector current-peak

Base current

-16

-120

100

200

-65~200

℃

P_D

T_j

Total Power Dissipation

Junction temperature

Storage temperature

T_C=25℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Thermal resistance junction to case

1.75

℃/W

R_{th j-c}

12 3

中文翻译

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与2N6053相关器件

型号	品牌	获取价格	描述	数据表
2N6053_12	COMSET	获取价格	POWER COMPLEMENTARY SILICON TRANSISTORS
2N6054	NJSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
2N6054	SEME-LAB	获取价格	Bipolar PNP Device in a Hermetically sealed TO3
2N6054	ISC	获取价格	Silicon PNP Power Transistors
2N6054	SAVANTIC	获取价格	Silicon PNP Power Transistors
2N6054	MOSPEC	获取价格	POWER TRANSISTORS(8A,100W)
2N6054	CENTRAL	获取价格	8A,80V Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington
2N6054LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 P
2N6055	MOSPEC	获取价格	POWER TRANSISTORS(8A,100W)
2N6055	COMSET	获取价格	COMPLEMENTARY POWER DARLINGTON