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2N6045G PDF预览

2N6045G

更新时间： 2024-11-04 03:56:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 95K
描述
Plastic Medium−Power Complementary Silicon Transistors

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中文翻译

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2N6045G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：2 weeks风险等级：0.9
Samacsys Description：NULL外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：1000
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：75 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

2N6045G 数据手册

 浏览型号2N6045G的Datasheet PDF文件第2页浏览型号2N6045G的Datasheet PDF文件第3页浏览型号2N6045G的Datasheet PDF文件第4页浏览型号2N6045G的Datasheet PDF文件第5页浏览型号2N6045G的Datasheet PDF文件第6页 
PNP − 2N6040, 2N6042,  
NPN − 2N6043, 2N6045  
2N6043 and 2N6045 are Preferred Devices  
Plastic Medium−Power  
Complementary Silicon  
Transistors  
http://onsemi.com  
Plastic medium−power complementary silicon transistors are  
designed for general−purpose amplifier and low−speed switching  
applications.  
DARLINGTON, 8 AMPERES  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
Features  
• High DC Current Gain − h = 2500 (Typ) @ I = 4.0 Adc  
FE  
C
60 − 100 VOLTS, 75 WATTS  
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −  
V
= 60 Vdc (Min) − 2N6040, 2N6043  
CEO(sus)  
= 100 Vdc (Min) − 2N6042, 2N6045  
• Low Collector−Emitter Saturation Voltage −  
V
CE(sat)  
= 2.0 Vdc (Max) @ I = 4.0 Adc − 2N6043,44  
C
= 2.0 Vdc (Max) @ I = 3.0 Adc − 2N6042, 2N6045  
C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
TO−220AB  
CASE 221A−09  
STYLE 1  
• ESD Ratings:  
Human Body Model, 3B > 8000 V  
1
Machine Model, C > 400 V  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS (Note 1)  
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
2N6040  
V
CEO  
60  
Vdc  
2N6043  
2N6042  
2N6045  
100  
Collector−Base Voltage  
2N6040  
2N6043  
2N6042  
2N6045  
V
CB  
60  
Vdc  
100  
2N604xG  
AYWW  
Emitter−Base Voltage  
Collector Current  
V
5.0  
Vdc  
Adc  
EB  
Continuous  
Peak  
I
8.0  
16  
C
Base Current  
I
B
120  
mAdc  
2N604x = Device Code  
x = 0, 2, 3, or 5  
Total Power Dissipation @ T = 25°C  
P
75  
0.60  
W
W/°C  
C
D
Derate above 25°C  
A
Y
= Assembly Location  
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
°C  
stg  
WW  
G
= Work Week  
= Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Indicates JEDEC Registered Data.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 7  
2N6040/D  
 
123456

中文翻译

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2N6045G 替代型号

型号 品牌 替代类型 描述 数据表
TIP102TU ONSEMI

类似代替

 8.0 A, 100 V NPN Darlington Bipolar Power Transistor
TIP102G ONSEMI

类似代替

 Plastic Medium−Power Complementary Silicon Transistors
2N6045 ONSEMI

类似代替

 Plastic Medium-Power Complementary Silicon Transistors

与2N6045G相关器件

型号 品牌 获取价格 描述 数据表
2N6045L MOTOROLA

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 		8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6045LEADFREE CENTRAL

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 		Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
2N6045N MOTOROLA

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 		8A, 100V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6045S MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
2N6045T MOTOROLA

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 		8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2N6045TIN/LEAD CENTRAL

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 		Power Bipolar Transistor,
2N6046 MICROSEMI

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 		Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3
2N6047 ETC

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 		TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AE
2N6048 ETC

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 		TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | TO-210AE
2N6048E3 MICROSEMI

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 		Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal,

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