是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | TO-63 |
包装说明: | POST/STUD MOUNT, O-MUPM-D3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.46 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 20 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JEDEC-95代码: | TO-63 |
JESD-30 代码: | O-MUPM-D3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 200 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 114 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 30 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N6047 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AE | |
2N6048 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | TO-210AE | |
2N6048E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, | |
2N6049 | MOTOROLA |
获取价格 |
4 AMPERE POWER TRANSISTOR PNP SILICON | |
2N6049 | CENTRAL |
获取价格 |
Power Transistors | |
2N6049 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
2N6049 | ISC |
获取价格 |
Silicon PNP Power Transistors | |
2N6049 | NJSEMI |
获取价格 |
POWER TRANSISTOR PNP SILICON | |
2N6049 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO66 | |
2N6049E | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO66 |