5秒后页面跳转
2N6052 PDF预览

2N6052

更新时间: 2024-02-26 13:25:05
品牌 Logo 应用领域
SEME-LAB /
页数 文件大小 规格书
1页 16K
描述
Bipolar PNP Device in a Hermetically sealed TO3

2N6052 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-204AA
包装说明:TO-3, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.13
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:100 V配置:DARLINGTON
最小直流电流增益 (hFE):750JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

2N6052 数据手册

  
2N6052  
Dimensions in mm (inches).  
Bipolar PNP Device in a  
Hermetically sealed TO3  
Metal Package.  
25.15 (0.99)  
26.67 (1.05)  
6.35 (0.25)  
9.15 (0.36)  
10.67 (0.42)  
11.18 (0.44)  
1.52 (0.06)  
3.43 (0.135)  
1
2
Bipolar PNP Device.  
VCEO = 100V  
3
(case)  
3.84 (0.151)  
4.09 (0.161)  
IC = 12A  
7.92 (0.312)  
12.70 (0.50)  
All Semelab hermetically sealed products  
can be processed in accordance with the  
requirements of BS, CECC and JAN,  
JANTX, JANTXV and JANS specifications.  
TO3 (TO204AA)  
PINOUTS  
1 – Base  
2 – Emitter  
Case - Collector  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
100  
Units  
VCEO*  
IC(CONT)  
hFE  
V
A
12  
@ 3/6 (VCE / IC)  
750  
12000  
-
ft  
4M  
Hz  
W
PD  
150  
* Maximum Working Voltage  
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.  
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed  
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.  
Semelab plc.  
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Generated  
31-Jul-02  

与2N6052相关器件

型号 品牌 描述 获取价格 数据表
2N6052/D ETC Darlington Complementary Silicon Power Transistors

获取价格

2N6052_06 ONSEMI Darlington Complementary Silicon Power Transistors

获取价格

2N6052E3 MICROSEMI Power Bipolar Transistor, 12A I(C), PNP

获取价格

2N6052G ONSEMI Darlington Complementary Silicon Power Transistors

获取价格

2N6052G NJSEMI Trans Darlington PNP 100V 12A 3-Pin(2+Tab) TO-204 Tray

获取价格

2N6052LEADFREE CENTRAL Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2

获取价格