生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.66 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 100 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 1000 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 75 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6045S | MOTOROLA | Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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2N6045T | MOTOROLA | 8 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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2N6045TIN/LEAD | CENTRAL | Power Bipolar Transistor, |
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2N6046 | MICROSEMI | Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 |
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2N6047 | ETC | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | TO-210AE |
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2N6048 | ETC | TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | TO-210AE |
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