Datasheet > 2N5551N

2N5551N

更新时间： 2024-09-16 03:56:19

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2N5551N 技术参数

2N5551N

Semiconductor

NPN Silicon Transistor

Descriptions

• General purpose amplifier

• High voltage application

Features

• High collector breakdown voltage : V_CBO= 180V, V_CEO= 160V

• Low collector saturation voltage : V_CE(sat)=0.5V(MAX.)

• Complementary pair with 2N5401N

Ordering Information

Type NO.

Marking

Package Code

TO-92N

2N5551N

2N5551

Outline Dimensions

unit : mm

4.20~4.40

2.25 Max.

0.52 Max.

0.90 Max.

1.27 Typ.

0.40 Max.

1 2 3

3.55 Typ

PIN Connections

1. Emitter

2. Base

3. Collector

KSD-T0C035-001

12 3 4

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型号	品牌	获取价格	描述	数据表
2N5551RL	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N5551RL1	ONSEMI	获取价格	Amplifier Transistors
2N5551RL1	MOTOROLA	获取价格	600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5551RL1G	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
2N5551RLRA	ONSEMI	获取价格	Amplifier Transistors
2N5551RLRA	MOTOROLA	获取价格	600mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2N5551RLRAG	ONSEMI	获取价格	Amplifier Transistors NPN Silicon
2N5551RLRE	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2N5551RLRF	MOTOROLA	获取价格	暂无描述
2N5551RLRM	ONSEMI	获取价格	Amplifier Transistors