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2N5550RLRPG PDF预览

2N5550RLRPG

更新时间: 2024-11-23 22:31:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
6页 75K
描述
Amplifier Transistors

2N5550RLRPG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:LEAD FREE, CASE 29-11, TO-226AA, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.08
Is Samacsys:N最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

2N5550RLRPG 数据手册

 浏览型号2N5550RLRPG的Datasheet PDF文件第2页浏览型号2N5550RLRPG的Datasheet PDF文件第3页浏览型号2N5550RLRPG的Datasheet PDF文件第4页浏览型号2N5550RLRPG的Datasheet PDF文件第5页浏览型号2N5550RLRPG的Datasheet PDF文件第6页 
2N5550, 2N5551  
Preferred Device  
Amplifier Transistors  
NPN Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
Device Marking: Device Type, e.g., 2N5550, Date Code  
COLLECTOR  
3
2
BASE  
MAXIMUM RATINGS  
Rating  
Symbol 2N5550 2N5551  
Unit  
Vdc  
1
EMITTER  
Collector − Emitter Voltage  
Collector − Base Voltage  
Emitter − Base Voltage  
Collector Current − Continuous  
Total Device Dissipation  
V
CEO  
V
CBO  
140  
160  
160  
180  
Vdc  
V
EBO  
6.0  
Vdc  
MARKING  
DIAGRAM  
I
C
600  
mAdc  
P
D
D
@ T = 25°C  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
A
2N  
55xx  
YWW  
TO−92  
CASE 29  
STYLE 1  
Total Device Dissipation  
@ T = 25°C  
Derate above 25°C  
P
1
2
1.5  
12  
W
mW/°C  
C
3
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
55xx  
Y
WW  
Specific Device Code  
= Year  
= Work Week  
Maximumratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
200  
°C/W  
Preferred devices are recommended choices for future use  
and best overall value.  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
83.3  
°C/W  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 3  
2N5550/D  

2N5550RLRPG 替代型号

型号 品牌 替代类型 描述 数据表
2N5550G ONSEMI

完全替代

Amplifier Transistors NPN Silicon
2N5550RLRA ONSEMI

完全替代

Amplifier Transistors

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