Datasheet > 2N5550S_99

2N5550S_99

更新时间： 2024-09-23 07:28:51

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	37K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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2N5550S_99 数据手册

SEMICONDUCTOR

2N5550S

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

HIGH VOLTAGE APPLICATION.

DIM MILLIMETERS

FEATURES

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

High Collector Breakdwon Voltage

: V_CBO=160V, V_CEO=140V

Low Leakage Current.

0.95

: I_CBO=100nA(Max.) V_CB=100V

Low Saturation Voltage

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

: V_CE(sat)=0.25V(Max.) I_C=50mA, I_B=5mA

Low Noise : NF=10dB (Max.)

0.20 MIN

1.00+0.20/-0.10

1. EMITTER

2. BASE

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

3. COLLECTOR

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

160

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

140

SOT-23

600

I_B

Base Current

100

P_C*

T_j

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

350

150

Marking

T_stg

-55 150

Lot No.

Note : * Package Mounted On 99.5% Alumina 10

0.6

)

Type Name

1999. 11. 30

Revision No : 2

1/2

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