生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.61 |
最大集电极电流 (IC): | 5 A | 配置: | Single |
最小直流电流增益 (hFE): | 40 | 最高工作温度: | 100 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 25 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 0.4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4210 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | TO-210AE |
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2N4210E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 |
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2N4211 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | TO-210AE |
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2N4211E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 |
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2N4213 | MOTOROLA |
获取价格 |
SILICON CONTROLLED RECTIFIERS |
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2N4213 | NJSEMI |
获取价格 |
SCR, V(DRM) = 50V TO 99.9V |
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2N4213 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1600mA I(T), 50V V(DRM), 50V V(RRM), 1 Element |
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2N4214 | MOTOROLA |
获取价格 |
SILICON CONTROLLED RECTIFIERS |
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2N4214 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Element |
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2N4215 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1000mA I(T), 150V V(DRM), 150V V(RRM), 1 Eleme |
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