生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.77 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 20 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-63 | JESD-30 代码: | O-MUPM-D3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4213 | MOTOROLA |
获取价格 |
SILICON CONTROLLED RECTIFIERS |
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2N4213 | NJSEMI |
获取价格 |
SCR, V(DRM) = 50V TO 99.9V |
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2N4213 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1600mA I(T), 50V V(DRM), 50V V(RRM), 1 Element |
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2N4214 | MOTOROLA |
获取价格 |
SILICON CONTROLLED RECTIFIERS |
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2N4214 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1A I(T)RMS, 1600mA I(T), 100V V(DRM), 100V V(RRM), 1 Element |
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2N4215 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1.3A I(T)RMS, 1000mA I(T), 150V V(DRM), 150V V(RRM), 1 Eleme |
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2N4216 | MOTOROLA |
获取价格 |
SILICON CONTROLLED RECTIFIERS |
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2N4216 | NJSEMI |
获取价格 |
SCR, V(DRM) = 200V TO 299.9V |
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2N4216 | SSDI |
获取价格 |
Silicon Controlled Rectifier, 1A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element |
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2N4218 | NJSEMI |
获取价格 |
SCR, V(DRM) = 300V TO 399.9V |
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