Datasheet > 2N3507_07

2N3507_07

更新时间： 2024-11-11 03:56:11

品牌	Logo	应用领域
SEMICOA		晶体晶体管
页数	文件大小	规格书
2页	86K
描述
Silicon NPN Transistor

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中文翻译

获取价格

数据手册

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2N3507_07 数据手册

2N3507

Silicon NPN Transistor

Data Sheet

Description

Applications

• General purpose switching transistor

• Low power

• NPN silicon transistor

SEMICOA offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N3507J)

• JANTX level (2N3507JX)

• JANTXV level (2N3507JV)

• JANS level (2N3507JS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

Features

• Radiation testing (total dose) upon request

• Hermetically sealed TO-39 metal can

• Also available in chip configuration

• Chip geometry 1506

• Reference document:

MIL-PRF-19500/349

Benefits

• Qualification Levels: JAN, JANTX,

Please contact SEMICOA for special configurations

JANTXV and JANS

www.SEMICOA.com or (714) 979-1900

• Radiation testing available

T_C= 25°C unless otherwise specified

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Volts

Collector-Emitter Voltage

V_CEO

V_CBO

Collector-Base Voltage

Emitter-Base Voltage

Volts

V_EBO

I_C

Collector Current, Continuous

Power Dissipation, T_A= 25^OC

Derate linearly above 25^OC

Power Dissipation, T_C= 25^OC

Derate linearly above 25^OC

5.71

28.6

mW/°C

°C/W

P_T

Thermal Resistance

175

R_θJA

Operating Junction Temperature

Storage Temperature

T_J

T_STG

°C

-65 to +200

SEMICOA

Rev. E

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

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