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2N3507A PDF预览

2N3507A

更新时间: 2024-11-11 07:28:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管
页数 文件大小 规格书
2页 92K
描述
NPN MEDIUM POWER SILICON TRANSISTOR

2N3507A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:BCY
包装说明:CYLINDRICAL, O-MBCY-W3针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.25
最大集电极电流 (IC):3 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):90 ns
最大开启时间(吨):45 ns

2N3507A 数据手册

 浏览型号2N3507A的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
NPN MEDIUM POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/349  
DEVICES  
LEVELS  
JAN  
2N3506  
2N3507  
JANTX  
JANTXV  
2N3506A  
2N3506L  
2N3506AL  
2N3507A  
2N3507L  
2N3507AL  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
2N3506 2N3507  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
40  
60  
50  
80  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
5.0  
3.0  
@ TA = 25°C (1)  
@ TC = 25°C (2)  
1.0  
5.0  
Total Power Dissipation  
PT  
W
Operating & Storage Temperature Range  
Note:  
Top, Tstg  
-65 to +200  
°C  
TO-5 (L-Versions)  
1) Derate linearly 5.71 mW/°C for TA > +25°C  
2) Derate linearly 55.5 mW/°C for TC > +25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 10mAdc  
V(BR)CEO  
40  
50  
Vdc  
2N3506  
2N3507  
Collector-Emitter Cutoff Current  
VCE = 40Vdc  
VCE = 60Vdc  
ICEX  
µAdc  
2N3506  
2N3507  
1.0  
1.0  
TO-39 (TO-205-AD)  
Collector-Base Breakdown Voltage  
IC = 100µAdc  
60  
80  
V(BR)CBO  
V(BR)EBO  
Vdc  
Vdc  
Emitter-Base Breakdown Voltage  
IE = 10µAdc  
5
ON CHARACTERISTICS (3)  
Forward-Current Transfer Ratio  
IC = 500mAdc, VCE = 1Vdc  
2N3506  
2N3507  
50  
35  
250  
175  
hFE  
hFE  
hFE  
Forward-Current Transfer Ratio  
IC = 1.5Adc, VCE = 2Vdc  
2N3506  
2N3507  
40  
30  
200  
150  
Forward-Current Transfer Ratio  
IC = 2.5Adc, VCE = 3Vdc  
2N3506  
2N3507  
30  
25  
T4-LDS-0016 Rev. 1 (072040)  
Page 1 of 2  

2N3507A 替代型号

型号 品牌 替代类型 描述 数据表
JAN2N3507 MICROSEMI

完全替代

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, S

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