Datasheet > 2N2221AUB/TR

2N2221AUB/TR

更新时间： 2024-11-19 09:42:51

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	58K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-4

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2N2221AUB/TR 数据手册

TECHNICAL DATA

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/ 255

Devices

2N2221A

Qualified Level

JAN

2N2222A

2N2221AL

2N2221AUA

2N2221AUB

2N2222AL

2N2222AUA

2N2222AUB

JANTX

JANTXV

JANS

JANHC

MAXIMUM RATINGS

Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

All Types

Unit

Vdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

6.0

800

TO-18* (TO-206AA)

2N2221A, 2N2222A

mAdc

Total Power Dissipation @ T_A= +25⁰C

2N2221A, L; 2N2222A, L ⁽¹⁾

0.5

0.65

0.50

P_T

2N2221AUA; 2N2222AUA ⁽²⁾

2N2221AUB; 2N2222AUB ⁽¹⁾

Operating & Storage Junction Temperature Range

-65 to +200

⁰C

T_op_,T

stg

4 PIN*

2N2221AUA, 2N2222AUA

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Ambient

2N2221A, L; 2N2222A, L

325

210

325

⁰C/W

qJA

2N2221AUA; 2N2222AUA

2N2221AUB; 2N2222AUB

3 PIN*

2N2221AUB, 2N2222AUB

1) Derate linearly 3.08 mW/⁰C above T_A> +37.5⁰C

2) Derate linearly 4.76 mW/⁰C above T_A> +63.5⁰C

*See appendix A for package

outline

ELECTRICAL CHARACTERISTICS (T_A= 25⁰C unless otherwise noted)

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

I_C= 10 mAdc

Vdc

V_(BR)

CEO

Collector-Base Cutoff Current

V_CB= 75 Vdc

V_CB= 60 Vdc

mAdc

hAdc

I_CBO

Emitter-Base Cutoff Current

V_EB= 6.0 Vdc

V_EB= 4.0 Vdc

mAdc

hAdc

I_EBO

Collector-Base Cutoff Current

V_CE= 50 Vdc

I_CES

hAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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与2N2221AUB/TR相关器件

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