5秒后页面跳转
2N2221 PDF预览

2N2221

更新时间: 2024-11-30 07:28:19
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管
页数 文件大小 规格书
2页 526K
描述
NPN SILICON TRANSISTOR

2N2221 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.09
Is Samacsys:N最大集电极电流 (IC):0.8 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-18
JESD-30 代码:O-MBCY-W3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.62 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

2N2221 数据手册

 浏览型号2N2221的Datasheet PDF文件第2页 
2N2221  
2N2222  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR 2N2221, 2N2222  
types are silicon NPN epitaxial planar transistors  
designed for small signal, general purpose switching  
applications.  
MARKING: FULL PART NUMBER  
TO-18 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Power Dissipation  
V
V
V
60  
30  
CBO  
CEO  
EBO  
V
V
5.0  
I
800  
mA  
mW  
W
C
P
400  
D
D
Power Dissipation (T =25°C)  
C
P
1.2  
Operating and Storage Junction Temperature  
T , T  
-65 to +200  
438  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
146  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=50V  
-
10  
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=50V, T =150°C  
A
=3.0V  
-
-
10  
10  
-
μA  
nA  
V
BV  
BV  
BV  
I =10μA  
60  
30  
5.0  
-
CBO  
C
I =10mA  
-
V
CEO  
C
I =10μA  
-
V
EBO  
E
V
V
V
V
I =150mA, I =15mA  
0.4  
1.6  
1.3  
2.6  
-
V
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(SAT)  
C
B
I =500mA, I =50mA  
-
V
C
B
I =150mA, I =15mA  
0.6  
-
V
C
B
I =500mA, I =50mA  
V
C
B
f
V
=20V, I =20mA, f=100MHz  
250  
-
MHz  
pF  
pF  
T
CE  
CB  
EB  
C
C
C
V
V
=10V, I =0, f=100kHz  
8.0  
30  
ob  
ib  
E
=0.5V, I =0, f=100kHz  
-
C
R1 (30-January 2012)  

与2N2221相关器件

型号 品牌 获取价格 描述 数据表
2N2221-2N2222 STMICROELECTRONICS

获取价格

HIGH-SPEED SWITCHES
2N2221A SEME-LAB

获取价格

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.
2N2221A NJSEMI

获取价格

NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A COMSET

获取价格

SWITCHING SILICON TRANSISTORS
2N2221A INFINEON

获取价格

NPN SILICON PLANAR TRANSISTORS
2N2221A BOCA

获取价格

NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2221A MICROSEMI

获取价格

SMALL SIGNAL BIPOLAR NPN SILICON
2N2221A TE

获取价格

Radiation Hardened NPN Silicon Switching Transistors
2N2221A CENTRAL

获取价格

Small Signal Transistors
2N2221A FAIRCHILD

获取价格

NPN Small Signal General Purpose Amplifiers