Datasheet > 2N2221A_2

2N2221A_2

更新时间： 2024-02-06 15:13:22

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体开关晶体管
页数	文件大小	规格书
6页	138K
描述
NPN SILICON SWITCHING TRANSISTOR

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数据手册

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2N2221A_2 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/255

DEVICES

LEVELS

2N2221A

2N2221AL

2N2221AUA

2N2221AUB

2N2221AUBC *

2N2222A

2N2222AL

2N2222AUA

2N2222AUB

2N2222AUBC *

JAN

JANTX

JANTXV

JANS

* Available to JANS quality level only.

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Value

Unit

Collector-Emitter Voltage

V_CEO

V_CBO

V_EBO

I_C

Vdc

mAdc

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current

800

TO-18 (TO-206AA)

2N2221A, 2N2222A

Total Power Dissipation @ T_A= +25°C

Operating & Storage Junction Temperature Range

P_T

0.5

T_op, T_stg

-65 to +200

°C

THERMAL CHARACTERISTICS

Parameters / Test Conditions

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Ambient

2N2221A, L

2N2221AUA

2N2221AUB, UBC

2N2222A, L

2N2222AUA

2N2222AUB, UBC

325

210

325

°C/W

R_θJA

4 PIN

2N2221AUA, 2N2222AUA

Note: Consult 19500/255 for thermal performance curves.

1. Derate linearly 3.08mW/°C above T_A> +37.5°C

2. Derate linearly 4.76mW/°C above T_A> +63.5°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 10mAdc

V_(BR)CEO

I_CBO

Vdc

3 PIN

2N2221AUB, 2N2222AUB

2N2221AUBC, 2N2222AUBC

(UBC = Ceramic Lid Version)

Collector-Base Cutoff Current

V_CB= 75Vdc

μAdc

ηAdc

_CB= 60Vdc

Emitter-Base Cutoff Current

_EB= 6.0Vdc

I_EBO

μAdc

ηAdc

V_EB= 4.0Vdc

Collector-Emitter Cutoff Current

V_CE= 50Vdc

I_CES

ηAdc

T4-LDS-0060 Rev. 2 (100247)

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