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2N2221-2N2222 PDF预览

2N2221-2N2222

更新时间: 2024-11-29 22:35:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
5页 74K
描述
HIGH-SPEED SWITCHES

2N2221-2N2222 数据手册

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2N2218-2N2219  
2N2221-2N2222  
HIGH-SPEED SWITCHES  
DESCRIPTION  
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-  
con planar epitaxial NPN transistors in Jedec  
TO-39 (for 2N2218 and 2N2219) and in Jedec  
TO-18 (for 2N2221 and 2N2222) metal cases. They  
are designed for high-speed switching applications  
at collector currents up to 500 mA, and feature use-  
ful current gain over a wide range of collector cur-  
rent, low leakage currents and low saturation volt-  
ages.  
2N2218/2N2219 approved to CECC 50002-  
100, 2N2221/2N2222 approved to CECC  
50002-101 available on request.  
TO-39  
TO-18  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-base Voltage (IE = 0)  
Value  
60  
Unit  
V
Collector-emitter Voltage (IB = 0)  
Emitter-base Voltage (IC = 0)  
Collector Current  
30  
V
5
V
0.8  
A
Pto t  
Total Power Dissipation at Tamb 25 °C  
for 2N2218 and 2N2219  
for 2N2221 and 2N2222  
at Tcas e 25 °C  
0.8  
0.5  
W
W
for 2N2218 and 2N2219  
for 2N2221 and 2N2222  
3
1.8  
W
W
Tstg  
Tj  
Storage Temperature  
Junction Temperature  
– 65 to 200  
175  
°C  
°C  
January 1989  
1/5  

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RADIATION HARDENED