Datasheet > 2DB1188P

2DB1188P

更新时间： 2024-09-19 07:27:59

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	230K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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2DB1188P 数据手册

2DB1188P/Q/R

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Complementary NPN Type Available (2DD1766)

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

SOT89-3L

Mechanical Data

•

Case: SOT89-3L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Marking & Type Code Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072 grams (approximate)

TOR

LLEC

2,4

3 E

2 C

1 B

•

C 4

ASE

•

EMITTER

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Value

-40

-32

-5

Unit

V_CBO

V_CEO

V_EBO

I_CM

Peak Pulse Current

-3

Continuous Collector Current

-2

I_C

Thermal Characteristics

Characteristic

Symbol

P_D

R_θ

Value

Unit

Power Dissipation (Note 3) @ T_A= 25°C

125

°C/W

°C

Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A= 25°C

Operating and Storage Temperature Range

-55 to +150

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

Min

Typ

Max

Unit

Conditions

-40

-32

-5

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

⎯

-1

_C= -50μA, I_E= 0

_C= -1mA, I_B= 0

_E= -50μA, I_C= 0

_CB= -20V, I_E= 0

_EB= -4V, I_C= 0

⎯

μA

Emitter Cut-Off Current

I_EBO

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

-0.35

⎯

-0.8

180

270

390

V_CE(SAT)

⎯

120

180

I_C= -2A, I_B= -0.2A

V_CE= -3V, I_C= -0.5A

⎯

2DB1188P

2DB1188Q

2DB1188R

DC Current Gain

h_FE

⎯

SMALL SIGNAL CHARACTERISTICS

I_E= 0.1A, V_CE= -5V,

f = 30MHz

V_CB= -10V, I_E= 0,

f = 1MHz

Transition Frequency

120

MHz

f_T

⎯

Output Capacitance

C_ob

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31144 Rev. 4 - 2

1 of 4

www.diodes.com

2DB1188P/Q/R

12 3 4

中文翻译

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与2DB1188P相关器件

型号	品牌	获取价格	描述	数据表
2DB1188P_11	DIODES	获取价格	40V PNP SURFACE MOUNT TRANSISTOR IN SOT89
2DB1188P-13	DIODES	获取价格	PNP SURFACE MOUNT TRANSISTOR
2DB1188Q	DIODES	获取价格	PNP, 32V, 2A, SOT89
2DB1188Q-13	DIODES	获取价格	PNP SURFACE MOUNT TRANSISTOR
2DB1188Q-13R	DIODES	获取价格	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon,
2DB1188R	DIODES	获取价格	PNP, 32V, 2A, SOT89
2DB1188R-13	DIODES	获取价格	PNP SURFACE MOUNT TRANSISTOR
2DB1386Q	DIODES	获取价格	PNP SURFACE MOUNT TRANSISTOR
2DB1386Q_11	DIODES	获取价格	PNP SURFACE MOUNT TRANSISTOR
2DB1386Q-13	DIODES	获取价格	PNP SURFACE MOUNT TRANSISTOR

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