2DB1697
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
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Epitaxial Planar Die Construction
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Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Complementary NPN Type Available (2DD2661)
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
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TOR
LLEC
CO
2,4
3 E
2 C
1 B
C 4
T
1
ASE
B
3
EMITTER
VIEW
OP
Top View
Device Schematic
Pin Out Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
ICM
Value
-15
-12
-6
Unit
V
V
V
A
Peak Pulse Current
-4
Continuous Collector Current
-2
A
IC
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Symbol
PD
Value
0.9
Unit
W
139
°C/W
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Power Dissipation (Note 4) @ TA = 25°C
Rθ
JA
2
PD
62.5
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-15
-12
-6
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -10μA, IE = 0
C = -1mA, IB = 0
E = -10μA, IC = 0
V
-0.1
⎯
⎯
μA
μA
VCB = -15V, IE = 0
VEB = -6V, IC = 0
Emitter Cut-Off Current
-0.1
IEBO
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
DC Current Gain
-65
-180
680
mV
VCE(SAT)
hFE
⎯
270
IC = -1A, IB = -50mA
⎯
⎯
VCE = -2V, IC = -200mA
SMALL SIGNAL CHARACTERISTICS
V
CB = -10V, IE = 0,
f = 1MHz
CE = -2V, IC = -100mA,
f = 100MHz
Output Capacitance
40
pF
Cobo
fT
⎯
⎯
⎯
⎯
V
Current Gain-Bandwidth Product
140
MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DB1697
Document number: DS31618 Rev. 2 - 2
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