2DB1386Q/R
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
SOT89-3L
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
TOR
LLEC
2,4
CO
3 E
2 C
1 B
•
•
C 4
T
1
ASE
B
•
•
•
3
EMITTER
EW
VI
OP
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
ICM
Value
-30
-20
-6
-10
-5
Unit
V
V
V
A
A
IC
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Typ
Max
Unit
Conditions
-30
-20
-6
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -50μA, IE = 0
C = -1mA, IB = 0
E = -50μA, IC = 0
CB = -20V, IE = 0
EB = -5V, IC = 0
V
-0.5
⎯
⎯
μA
μA
V
V
Emitter Cut-Off Current
-0.5
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
-0.25
⎯
⎯
-1.0
270
390
V
VCE(SAT)
⎯
120
180
I
I
C = -4A, IB = -0.1A
2DB1386Q
2DB1386R
DC Current Gain
hFE
⎯
C = -0.5A, VCE = -2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = -20V, IE = 0,
f = 1MHz
55
pF
pF
Cobo
fT
⎯
⎯
⎯
⎯
VCE = -6V, IE = 50mA,
f = 30MHz
Current Gain-Bandwidth Product
100
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31147 Rev. 5 - 2
1 of 4
www.diodes.com
2DB1386Q/R
© Diodes Incorporated
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