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2DB1694

更新时间： 2024-11-29 07:27:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 88K
描述
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

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2DB1694 数据手册

 浏览型号2DB1694的Datasheet PDF文件第2页浏览型号2DB1694的Datasheet PDF文件第3页浏览型号2DB1694的Datasheet PDF文件第4页 
2DB1694  
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Case: SOT-323  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.  
Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
Low Collector-Emitter Saturation Voltage  
Ideal for Low Power Amplification and Switching  
Complementary NPN Type Available (2DD2656)  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green Device" (Note 2)  
•
•
•
•
•
•
C
E
B
Top View  
Device Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-30  
-30  
-6  
Unit  
V
Collector-Emitter Voltage  
V
Emitter-Base Voltage  
V
Collector Current - Continuous  
Peak Pulse Collector Current  
-1  
A
-2  
A
ICM  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
300  
Unit  
mW  
Power Dissipation (Note 3) @ TA = 25°C  
PD  
417  
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C  
Power Dissipation (Note 4) @ TA = 25°C  
°C/W  
mW  
Rθ  
JA  
500  
PD  
250  
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C  
Operating and Storage Temperature Range  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 5)  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-30  
-30  
-6  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -10μA, IE = 0  
C = -1mA, IB = 0  
E = -10μA, IC = 0  
V
-0.1  
⎯
⎯
μA  
μA  
VCB = -30V, IE = 0  
VEB = -6V, IC = 0  
Emitter Cut-Off Current  
-0.1  
IEBO  
ON CHARACTERISTICS (Note 5)  
Collector-Emitter Saturation Voltage  
DC Current Gain  
-180  
-380  
680  
mV  
VCE(SAT)  
hFE  
⎯
270  
IC = -500mA, IB = -25mA  
⎯
⎯
VCE = -2V, IC = -100mA  
SMALL SIGNAL CHARACTERISTICS  
VCB = -10V, IE = 0,  
f = 1MHz  
Output Capacitance  
16  
pF  
Cobo  
fT  
⎯
⎯
⎯
⎯
V
CE = -2V, IC = -100mA,  
Current Gain-Bandwidth Product  
300  
MHz  
f = 100MHz  
Notes:  
1. No purposefully added lead.  
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.  
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
1 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
2DB1694  
Document number: DS31640 Rev. 2 - 2  
1234

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