Datasheet > 2DB1386Q

2DB1386Q

更新时间： 2024-11-29 07:27:59

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	225K
描述
PNP SURFACE MOUNT TRANSISTOR

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中文翻译

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数据手册

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2DB1386Q 数据手册

2DB1386Q/R

PNP SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

Mechanical Data

SOT89-3L

•

Case: SOT89-3L

Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Marking & Type Code Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072 grams (approximate)

TOR

LLEC

2,4

3 E

2 C

1 B

•

C 4

ASE

•

EMITTER

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Value

-30

-20

-6

-10

-5

Unit

I_C

Thermal Characteristics

Characteristic

Symbol

P_D

R_θ

Value

Unit

Power Dissipation (Note 3) @ T_A= 25°C

125

°C/W

°C

Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A= 25°C

Operating and Storage Temperature Range

-55 to +150

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

Min

Typ

Max

Unit

Conditions

-30

-20

-6

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

⎯

_C= -50μA, I_E= 0

_C= -1mA, I_B= 0

_E= -50μA, I_C= 0

_CB= -20V, I_E= 0

_EB= -5V, I_C= 0

-0.5

⎯

μA

Emitter Cut-Off Current

-0.5

I_EBO

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

-0.25

⎯

-1.0

270

390

V_CE(SAT)

⎯

120

180

_C= -4A, I_B= -0.1A

2DB1386Q

2DB1386R

DC Current Gain

h_FE

⎯

_C= -0.5A, V_CE= -2V

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

V_CB= -20V, I_E= 0,

f = 1MHz

C_obo

f_T

⎯

V_CE= -6V, I_E= 50mA,

f = 30MHz

Current Gain-Bandwidth Product

100

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31147 Rev. 5 - 2

1 of 4

www.diodes.com

2DB1386Q/R

12 3 4

中文翻译

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与2DB1386Q相关器件

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