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2SC3646

更新时间: 2024-01-17 20:45:15
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
7页 358K
描述
Bipolar Transistor High breakdown voltage and large current capacity

2SC3646 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.44其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-243
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN功耗环境最大值:1.3 W
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SC3646 数据手册

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2SA1416 / 2SC3646  
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
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