生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.76 | 其他特性: | RADIATION HARDENED |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 40 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-204AE | JESD-30 代码: | O-MBFM-P2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N7328D | RENESAS |
获取价格 |
40A, 100V, 0.085ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE | |
2N7328H | RENESAS |
获取价格 |
40A, 100V, 0.085ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE | |
2N7328R | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-204AE | |
2N7329 | RENESAS |
获取价格 |
30A, 100V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA | |
2N7329D | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-258 | |
2N7329H | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-258 | |
2N7329R | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-258 | |
2N7330 | RENESAS |
获取价格 |
26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE | |
2N7330D | RENESAS |
获取价格 |
26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE | |
2N7330H | RENESAS |
获取价格 |
26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE |