Datasheet > 1SS381,L3F

1SS381,L3F

更新时间： 2024-11-19 10:53:43

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	153K
描述
SILICON, VHF BAND, MIXER DIODE

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数据手册

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1SS381,L3F 数据手册

1SS381

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS381

VHF Tuner Band Switch Applications

Unit: mm

•

Small package

Small total capacitance: C = 1.2 pF (max)

Low series resistance: r = 0.6 Ω (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

100

Forward current

°C

Junction temperature

Storage temperature range

125

stg

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1G1A

Weight: 0.0014 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Forward voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 2 mA

⎯

0.85

0.1

⎯

μA

Reverse current

Reverse voltage

Total capacitance

Series resistance

V = 15 V

= 1 μA

⎯

= 6 V, f = 1 MHz

0.7

0.6

1.2

0.9

= 2 mA, f = 100 MHz

Marking

Start of commercial production

1994-07

2014-03-01

12 3

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