Datasheet > 1SS385F_07

1SS385F_07

更新时间： 2024-09-28 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	191K
描述
High Speed Switching

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中文翻译

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数据手册

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1SS385F_07 数据手册

1SS385F

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS385F

High Speed Switching

Unit: mm

z Low forward voltage: V = 0.23V (typ.) @I = 5mA

z Ultra-small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200 (*)

100 (*)

1 (*)

FSM

Power dissipation

100 (*)

125

°C

Junction temperature

Storage temperature range

Operating temperature range

−55~125

−40~100

stg

opr

JEDEC

―

EIAJ

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

TOSHIBA

Weight: 2.3 g

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min.

Typ.

Max.

Unit

―

0.18

0.23

0.35

―

0.30

0.50

F (1)

F (2)

F (3)

Forward voltage

= 5mA

= 100mA

= 10V

Reverse current

μA

Total capacitance

= 0, f = 1MH

Equivalent Circuit (Top View)

Marking

2007-11-01

12 3

中文翻译

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