Datasheet > 1SS385_07

1SS385_07

更新时间： 2024-11-18 03:54:59

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
3页	193K
描述
High Speed Switching

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1SS385_07 数据手册

1SS385

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS385

High Speed Switching

Unit: mm

z Low forward voltage: V

z Small package

= 0.23V (typ.) @I = 5mA

F (2)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

200 *

100 *

1 *

FSM

Power dissipation

100

°C

Junction temperature

125

Storage temperature range

Operating temperature range

−55∼125

−40∼100

stg

opr

JEDEC

―

EIAJ

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

TOSHIBA

Weight: 2.4mg

1-2S1B

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Unit rating. Total rating = unit rating × 1.5

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.18

0.23

0.35

―

0.30

0.50

F (1)

Forward voltage

VF (2)

IF = 5mA

= 100mA

F (3)

Reverse current

= 10V

μA

Total capacitance

= 0, f = 1MH

Equivalent Circuit (Top View)

Marking

2007-11-01

12 3

中文翻译

下载PDF

与1SS385_07相关器件

型号	品牌	获取价格	描述	数据表
1SS385F	TOSHIBA	获取价格	DIODE (HIGH SPEED SWITCHING)
1SS385F_07	TOSHIBA	获取价格	High Speed Switching
1SS385FV	TOSHIBA	获取价格	High-Speed Switching Applications
1SS385FV,L3F(B	TOSHIBA	获取价格	Rectifier Diode
1SS387	TYSEMI	获取价格	Small Package Low forward voltage :VF(3) = 0.98V(TYP) Small Total Capacitance :CT = 0.5pF(
1SS387	WINNERJOIN	获取价格	High Speed SWITCHING Diode
1SS387	MCC	获取价格	85 Volts Switching Diode
1SS387	LGE	获取价格	High Speed Switching Diodes
1SS387	TOSHIBA	获取价格	DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
1SS387	KEXIN	获取价格	ULTRA HIGH SPEED SWITCHING APPLICATION