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1SS387CT(TPL3) PDF预览

1SS387CT(TPL3)

更新时间: 2024-02-09 18:01:22
品牌 Logo 应用领域
东芝 - TOSHIBA 快速恢复二极管测试
页数 文件大小 规格书
4页 205K
描述
Rectifiers Ultra Hi Speed 80V 100mA

1SS387CT(TPL3) 技术参数

生命周期:Active包装说明:R-XBCC-N2
Reach Compliance Code:unknown风险等级:1.45
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJESD-30 代码:R-XBCC-N2
最大非重复峰值正向电流:1 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:0.1 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:CHIP CARRIER最大功率耗散:0.15 W
最大重复峰值反向电压:85 V最大反向电流:0.5 µA
最大反向恢复时间:0.0016 µs反向测试电压:80 V
子类别:Rectifier Diodes表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
Base Number Matches:1

1SS387CT(TPL3) 数据手册

 浏览型号1SS387CT(TPL3)的Datasheet PDF文件第2页浏览型号1SS387CT(TPL3)的Datasheet PDF文件第3页浏览型号1SS387CT(TPL3)的Datasheet PDF文件第4页 
1SS387  
TOSHIBA Diode Silicon Epitaxial Planar Type  
1SS387  
Ultra High Speed Switching Applications  
Unit: mm  
z Compact 2-pin package – ideal for high-density mounting  
z Low forward voltage : V = 0.98V (typ.)  
z Fast reverse recovery time: t = 1.6ns (typ.)  
F (3)  
rr  
z Small total capacitance  
: C = 0.5pF (typ.)  
T
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
Power dissipation  
I
200  
mA  
mA  
A
FM  
I
100  
O
I
1
FSM  
P
150 *  
125  
mW  
°C  
°C  
Junction temperature  
T
j
JEDEC  
Storage temperature  
T
55125  
stg  
JEITA  
1-1G1A  
TOSHIBA  
Weight: 1.4mg (typ)  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Mounted on a glass epoxy circuit board of 20 × 20mm,  
pad dimension of 4 × 4mm.  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.62  
0.75  
0.98  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
3.0  
4.0  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0, f = 1MH  
0.5  
1.6  
pF  
ns  
z
Reverse recovery time  
t
I = 10mA, Fig.1  
F
rr  
1
2007-11-01  

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