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1SS385(TE85L) PDF预览

1SS385(TE85L)

更新时间: 2024-01-19 08:11:48
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管
页数 文件大小 规格书
3页 197K
描述
RECTIFIER DIODES,COMMON CATHODE,SCHOTTKY,15V V(RRM),SOT-416

1SS385(TE85L) 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.68
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.3 V
最大非重复峰值正向电流:1 A最高工作温度:100 °C
最大输出电流:0.1 A最大重复峰值反向电压:15 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

1SS385(TE85L) 数据手册

 浏览型号1SS385(TE85L)的Datasheet PDF文件第2页浏览型号1SS385(TE85L)的Datasheet PDF文件第3页 
1SS385  
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type  
1SS385  
High Speed Switching  
Unit: mm  
z Low forward voltage: V  
z Small package  
= 0.23V (typ.) @I = 5mA  
F
F (2)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse Voltage  
Reverse voltage  
V
15  
10  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
200 *  
100 *  
1 *  
mA  
mA  
A
FM  
I
O
I
FSM  
P
Power dissipation  
100  
mW  
°C  
°C  
°C  
Junction temperature  
T
125  
j
Storage temperature range  
Operating temperature range  
T
55125  
40100  
stg  
opr  
T
JEDEC  
JEITA  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
TOSHIBA  
1-2S1B  
Weight: 2.4mg (typ.)  
temperature/current/voltage, etc.) are within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*:  
Unit rating. Total rating = unit rating × 1.5  
Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
F
Min  
Typ.  
Max  
Unit  
V
I
0.18  
0.23  
0.35  
0.30  
0.50  
20  
V
V
F (1)  
Forward voltage  
VF (2)  
IF = 5mA  
= 100mA  
V
I
V
F (3)  
F
Reverse current  
I
V
V
= 10V  
μA  
pF  
R
R
R
Total capacitance  
C
T
= 0, f = 1MH  
20  
40  
z
Equivalent Circuit (Top View)  
Marking  
1
2007-11-01  

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