Datasheet > 1SS366

1SS366

更新时间： 2024-11-20 06:16:47

品牌	Logo	应用领域
科信 - KEXIN		肖特基二极管光电二极管
页数	文件大小	规格书
1页	35K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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1SS366 数据手册

SMD Type

Diodes

Schottky Barrier Diode

1SS366

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Series connection of 2 elements in a very small-sized package facilitates high-density

mounting and permits 1SS366-applied equipment to be made smaller.

Small interterminal capacitance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Low forward voltage.

High breakdown voltage.

1.Base

2.Emitter

3.collector

Absolute Maxim um Ratings Ta = 25

Param eter

Reverse Voltage

Sym bol

V^R

Value

Unit

Forward Current

I^F

m A

Junction Tem perature

Storage tem perature

T^j

125

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Symbol

V^F(1)

V^F(2)

I^F

Conditions

IF = 1 mA

Min

Typ

Max

420

580

Unit

350

480

Forward Voltage

Forward Current

Reverse Current

IF = 10 mA

VF = 1 V

I^R(1)

I^R(2)

VR = 2 V

0.2

VR = 10 V

Interterminal Capacitance

V^R= 0 V, f = 1 MHz

IF = 10 mA

0.85

Forward Voltage Difference

Interterminal Capacitance Difference

V^R= 0 V, f = 1 MHz

0.1

Marking

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