Datasheet > 1SS190TE85R2

1SS190TE85R2

更新时间： 2024-11-01 15:25:39

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东芝 - TOSHIBA		/
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中文翻译

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数据手册

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1SS190TE85R2 数据手册

1SS190

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS190

Unit: mm

Ultra High Speed Switching Application

z Small package

: SC-59

: V

z Low forward voltage

= 0.92V (typ.)

F (3)

z Fast reverse recovery time: t = 1.6ns (typ.)

z Small total capacitance

: C = 2.2pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

150

°C

JEDEC

Junction temperature

125

JEITA

SC-59

Storage temperature range

−55~125

stg

1-3G1C

TOSHIBA

Weight: 0.012g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.61

0.74

0.92

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.20

0.1

0.5

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MH

2.2

1.6

Reverse recovery time

I = 10mA (Fig.1)

Marking

2007-11-01

12 3

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